CMOS-Compatible Optoelectronic Imagers

Silicon-based complementary metal oxide semiconductors have revolutionized the field of imaging, especially infrared imaging. Infrared focal plane array imagers are widely applied to night vision, haze food selection, semiconductor detection, and atmospheric pollutant detection. Over past several decades, CMOS integrated circuits modified by traditional bulk materials as sensitivity sensors for optoelectronic been used However, material-based synthesized complicated molecular beam epitaxy, they generally coupled with expensive flip-chip-integrated circuits. Hence, high costs fabrication processes limit development popularization imagers. Emerging materials, such inorganic–organic halide perovskites, organic polymers, colloidal quantum dots, become current focus point preparing CMOS-compatible imagers, can effectively decrease costs. these emerging also some problems in coupling readout uniformity, which influence quality The method regarding may a key future research directions. In review, recent progress on is summarized.